The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
May. 07, 2001
Yuhzoh Tsuda, Tenri, JP;
Takayuki Yuasa, Ikoma-gun, JP;
Shigetoshi Ito, Ikoma, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor light emitting device includes an emission layer () having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XNAsPSb(0≦x≦0.15, 0≦y≦0.2, 0≦z≦0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile