The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Sep. 23, 2004
Vincent Derycke, Le Pecq, FR;
Gérald Dujardin, Chatenay-Malabry, FR;
Andrew Mayne, Antony, FR;
Patrick Soukiassian, Remey les Chevreuse, FR;
Vincent Derycke, Le Pecq, FR;
Gérald Dujardin, Chatenay-Malabry, FR;
Andrew Mayne, Antony, FR;
Patrick Soukiassian, Remey les Chevreuse, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate () is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of spconfiguration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.