The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Jun. 30, 2003
Applicants:
Jung Taik Cheong, Seoul, KR;
Sang DO Lee, Gyeonggi-do, KR;
Bong Ho Choi, Seoul, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4757 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device having improved characteristics and reliability by forming a hard mask layer on a bit line to prevent degradation of characteristics of the device in a self-alignment contact process of a storage electrode is disclosed. The hard mask layer utilizes over-hang formed at the upper portion of the bit line so as to provide sufficient protection for the bit line in the subsequent etching processes.
Cheong, Jung. (2005). Method for forming a semiconductor device with a hard mask layer formed over a bit line to protect the bit line during subsequent etching steps (U.S. Patent No. 6924229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6924229
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile