The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Dec. 10, 2003
Applicant:
Sang Wook Ryu, Chungcheongbuk-Do, KR;
Inventor:
Sang Wook Ryu, Chungcheongbuk-Do, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/425 ;
U.S. Cl.
CPC ...
Abstract
The present invention is provided to form a trench in a semiconductor device, wherein by performing an ion implanting process to an area of a semiconductor substrate in which the trench would be formed to cause lattice defects in the area before forming the trench, an etching speed of the area is increased in subsequent trench forming processes. As a result, it is possible to prevent micro trenches from being formed in edge portions of patterns and to suppress a micro loading effect to be generated depending upon pattern sizes.