The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2005

Filed:

Aug. 06, 1999
Applicants:

Umesh Sharma, Newport Beach, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Hong J. Wu, Irvine, CA (US);

Suryanarayana Shivakumar Bhattacharya, Irvine, CA (US);

Xiaoming LI, Irvine, CA (US);

Inventors:

Umesh Sharma, Newport Beach, CA (US);

Kevin Q. Yin, Irvine, CA (US);

Hong J. Wu, Irvine, CA (US);

Suryanarayana Shivakumar Bhattacharya, Irvine, CA (US);

Xiaoming Li, Irvine, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

An anti-reflective coating for use in the fabrication of a semiconductor device includes a thin oxide layer and an overlying layer of silicon oxynitride. The anti-reflective layer is advantageously used in the fabrication of FLASH memory devices which include a layer of polycrystalline silicon and an underlying layer of silicon nitride. After being used to pattern the polycrystalline silicon and silicon nitride, the anti-reflective coating is removed in a solution of hot phosphoric acid with the removal taking place before the silicon oxynitride is exposed to any elevated temperatures.


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