The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Nov. 20, 2003
Il-young Kwon, Ichon-shi, KR;
Il-Young Kwon, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon, KR;
Abstract
A method for manufacturing a capacitor bottom electrode by using low k dielectric material as a sacrificial layer is employed to simplify manufacturing steps and prevent electrical shortage phenomenon of bottom electrodes. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process; forming a sacrificial layer of low k dielectric material on the semiconductor substrate; forming a photoresist pattern on the sacrificial layer; etching the sacrificial layer by using the photoresist pattern as an etching mask, thereby forming an opening; depositing a conductive layer on sides and a bottom face of the opening and a top face of the sacrificial layer; forming a photoresist on the conductive layer, wherein a concave region of the conductive layer is completely filled with the photoresist; planarizing the conductive layer till a top face of the sacrificial layer is exposed; and forming a bottom electrode by removing the sacrificial layer enclosing the bottom electrode by using Oplasma and by removing a residual photoresist.