The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Oct. 25, 2002
Applicants:
Haruhiko Okazaki, Yokohama, JP;
Koichi Nitta, Yokohama, JP;
Chiharu Nozaki, Yokohama, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.