The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Oct. 21, 2003
Yukio Yasuda, Tokyo, JP;
Yukio Yasuda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device which IGBT (Z) and a control circuit (B) for driving the IGBT (Z) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P) for inputting a drive signal of the IGBT (Z), a Schottky barrier diode (D) having an anode connected to the input terminal (P) and a cathode connected to an input terminal (B) of the control circuit (B), and a p-channel MOSFET (T) for shorting both ends of the Schottky barrier diode (D) when the voltage of the drive signal input to the input terminal (P) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.