The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Feb. 13, 2004
Katsuhiko Nishiwaki, Toyota, JP;
Tomoyoshi Kushida, Seto, JP;
Sachiko Kawaji, Owariasahi, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
It is intended to provide a high withstand voltage field effect type semiconductor device that relaxes electric fields in a semiconductor substrate without thickening thickness of a drift region and achieves withstand-ability against high voltage without sacrificing ON-voltage, switch-OFF characteristics, and miniaturization. A field effective type semiconductor device comprises emitter regionsand gate electrodesand the like on a surface (upper surface in FIG.), a collector regionand the like on the other surface (lower surface in FIG.), wherein Nfield dispersion regionsof low impurity concentration are arranged between P body regionsfacing to gate electrodesand an N drift regionbelow P body regions. Thereby, electric field between collector and emitter is relaxed and high withstand voltage field effect type semiconductor device is realized. Another field dispersion region can be arranged between the N drift regionand Pcollector regionbelow the N drift region