Process for producing semiconductor article using graded epitaxial growth

Abstract

A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded SiGe(x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed SiGelayer, a thin strained SiGelayer and another relaxed SiGelayer. Hydrogen ions are then introduced into the strained SiGelayer. The relaxed SiGelayer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed SiGelayer remains on the second substrate. In another exemplary embodiment, a graded SiGeis deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.