The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2005

Filed:

Aug. 26, 2002
Applicants:

Kiyoshi Arita, Fukuoka, JP;

Tetsuhiro Iwai, Kasuga, JP;

Junichi Terayama, Tosu, JP;

Inventors:

Kiyoshi Arita, Fukuoka, JP;

Tetsuhiro Iwai, Kasuga, JP;

Junichi Terayama, Tosu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract

In a plasma treating apparatus for carrying out a plasma treatment over a silicon waferhaving a protective tapestuck to a circuit formation face, the silicon waferis mounted on a mounting surfacewhich is provided on an upper surface of a lower electrodeformed of a conductive metal with the protective tapeturned toward the mounting surface. When a DC voltage is to be applied to the lower electrodeby a DC power portionfor electrostatic adsorption to adsorb and hold the silicon waferonto the lower electrodein the plasma treatment, the protective tapeis utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafercan be held by a sufficient electrostatic holding force.


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