The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6921718 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 26, 2005

Filed:

Apr. 08, 2003
Applicants:

Naoto Andoh, Tokyo, JP;

Takao Ishida, Tokyo, JP;

Kenji Hosogi, Tokyo, JP;

Inventors:

Naoto Andoh, Tokyo, JP;

Takao Ishida, Tokyo, JP;

Kenji Hosogi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/311 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate and an electrode disposed on a major surface of the semiconductor substrate. A via hole is formed on a center of the electrode so as to open from a surface of the electrode to a place under the surface of the semiconductor substrate. A via-hole foundation electrode for inhibiting diffusion from a metal layer is formed inside the via hole and on the surface of the electrode, a via-hole electrode is formed on the surface of the via-hole foundation electrode. A back via hole is formed on the back of the semiconductor substrate opposite to the major surface thereof, and opened from the back of the semiconductor substrate to the via-hole electrode. A back via-hole electrode is formed on the back of the semiconductor substrate including the inside of the back via hole.


Find Patent Forward Citations

Andoh, Naoto. (2005). Semiconductor device and method of manufacturing the same (U.S. Patent No. 6921718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6921718

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