The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Sep. 29, 2003
Ling MA, Los Angeles, CA (US);
Adam Amali, Hawthorne, CA (US);
Siddharth Kiyawat, El Segundo, CA (US);
Ashita Mirchandani, El Segundo, CA (US);
Donald He, Redondo Beach, CA (US);
Naresh Thapar, Los Angeles, CA (US);
Ritu Sodhi, Redondo Beach, CA (US);
Kyle Spring, Temecula, CA (US);
Daniel Kinzer, El Segundo, CA (US);
Ling Ma, Los Angeles, CA (US);
Adam Amali, Hawthorne, CA (US);
Siddharth Kiyawat, El Segundo, CA (US);
Ashita Mirchandani, El Segundo, CA (US);
Donald He, Redondo Beach, CA (US);
Naresh Thapar, Los Angeles, CA (US);
Ritu Sodhi, Redondo Beach, CA (US);
Kyle Spring, Temecula, CA (US);
Daniel Kinzer, El Segundo, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.