The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2005

Filed:

Jan. 22, 2002
Applicants:

Geun Su Lee, Kyoungki-do, KR;

Jae Chang Jung, Kyoungki-do, KR;

Ki Soo Shin, Kyoungki-do, KR;

Inventors:

Geun Su Lee, Kyoungki-do, KR;

Jae Chang Jung, Kyoungki-do, KR;

Ki Soo Shin, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/20 ;
U.S. Cl.
CPC ...
Abstract

Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device


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