The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
May. 14, 2004
Takahiro Kawata, Ome, JP;
Shigeru Nakahara, Musasimurayama, JP;
Keiichi Higeta, Hamura, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit device endowed with memory circuits achieving high operation margin and low energy consumption with high speed and high integration. Composing a memory cell with a MOSFET having a first threshold voltage corresponding to a first voltage and supplying a selection signal corresponding to said first voltage to a word line by a word driver driven at said first voltage. Corresponding to a second voltage smaller than said first voltage, forming a selection signal sending to said word driver by a decoder comprising MOSFET with a second threshold voltage smaller than said first voltage, operating at said first voltage, and installing a first level shifting circuit including inverter circuits that form a selection signal corresponding to said first voltage by receiving a selection signal corresponding to said second voltage. Thereby, high operation margin and low energy consumption with high speed and high integration can be achieved.