The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2005

Filed:

May. 13, 2003
Applicants:

Luigi Pascucci, Sesto San Giovanni, IT;

Paolo Rolandi, Voghera, IT;

Marco Riva, Lallio, IT;

Inventors:

Luigi Pascucci, Sesto San Giovanni, IT;

Paolo Rolandi, Voghera, IT;

Marco Riva, Lallio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C016/04 ;
U.S. Cl.
CPC ...
Abstract

A method for programming a non-volatile memory device of the multi-level type, includes a plurality of transistor cells grouped into memory words and conventionally provided with gate and drain terminals. The method applies different drain voltage values at different threshold values. Such values are directly proportional to the threshold levels to be attained by the individual memory word bits, and effective to provide for a simultaneous attainment of the levels, in a seeking-to manner, of the levels at the end of a limited number of pulses. Advantageously, a constant gate voltage value is concurrently applied to the gate terminals of said cells, such that the cell programming time is unrelated to the threshold level sought.


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