The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Mar. 13, 2001
John Francis Gregg, Oxford, GB;
John Francis Gregg, Oxford, GB;
Isis Innovation Limited, , GB;
Abstract
A spin transistor () comprises a spin injector () formed of a ferromagnetic material and constituting the emitter () of a three-terminal device, a spin filter () also formed of a ferromagnetic material and constituting a collector (), and a semiconductor base () region. A tunnelling barrier () is formed of an insulating metal oxide such as aluminium oxide between the emitter () and the base (). The tunnelling barrier () reduces the degree of spin depolarization as carriers are injected into the base (), and permits selection of spin injection energy. In preferred embodiments, a second tunnelling barrier () may be formed between the base () and the collector (). A method of manufacture is also provided.