The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Dec. 26, 2001
Applicant:
Tomoaki Shino, Yokohama, JP;
Inventor:
Tomoaki Shino, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor layer of a first conductive type formed in an active region, a first gate electrode formed on the semiconductor layer via a gate insulating film in a predetermined pattern, a first insulating mask formed on at least a part of the first gate electrode and a part of the semiconductor layer, and a pair of first diffusion regions of a second conductive type formed in the active region not covered with the first insulating mask and first gate electrode. The pair of first diffusion regions is positioned adjacent to the first gate electrode and being used as a source and drain.