The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Aug. 26, 2003
Applicant:
Howard Lee Tigelaar, Allen, TX (US);
Inventor:
Howard Lee Tigelaar, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
A gate structure () is formed on a semiconductor (). Source and drain extension regions () are formed in the semiconductor () adjacent to the gate structure (). Metal silicide layers () are formed on the extension regions () and sidewall structures (, and) are formed over the metal silicide layers (). Source and drain regions () are formed in the semiconductor (), and metal silicide layers () are formed on the source and drain regions ().
Tigelaar, Howard. (2005). Integrated circuit mos transistor with reduced drain and source resistance (U.S. Patent No. 6919605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6919605
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile