The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2005

Filed:

Oct. 16, 2003
Applicants:

David M. Thompson, Williamsville, NY (US);

Cynthia A. Hoover, Grand, NY (US);

Inventors:

David M. Thompson, Williamsville, NY (US);

Cynthia A. Hoover, Grand, NY (US);

Assignee:

Praxair Technology, Inc., Danbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F017/02 ; C23C016/00 ;
U.S. Cl.
CPC ...
Abstract

Asymmetric, disubstituted metallocene compounds have the general formula CpMCp' where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D; Cp′ is a second substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D′. Dis different from D′. Dis X; CHX; CHX(C═O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 2 and 8; b1 is an integer between 0 and 2(a1)+1−c1; c1 is an integer between 0 and 2(a1)+1−b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1−c2; and c2 is an integer between 0 and 2(a2)+1−b2; and D1′ is X; CHX; CHX(C═O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 1 and 8; b1 is an integer between 0 and 2(a2)+1−cl; c1 is an integer between 0 and 2(a1)+1−b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1−c2; and c2 is an integer between 0 and 2(a2)+1−b2. The compounds can be employed as precursors in film deposition processes.


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