The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Feb. 07, 2003
Tohru Saitoh, Ibaraki, JP;
Katsuya Nozawa, Osaka, JP;
Minoru Kubo, Nabari, JP;
Shigetaka Aoki, Kashiwara, JP;
Tohru Saitoh, Ibaraki, JP;
Katsuya Nozawa, Osaka, JP;
Minoru Kubo, Nabari, JP;
Shigetaka Aoki, Kashiwara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.