The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Feb. 17, 2004
Takahiro Kawano, Kanagawa, JP;
Tatsuo Yoneda, Hyogo, JP;
Hirobumi Matsuki, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises a semiconductor layer of a first conductivity type (), a base region () formed proximal to the semiconductor layer, a source region () selectively placed over the base region, trenches (T), a gate insulating layer () and a gate electrode () provided on an inner wall of each of the trenches, and a source electrode () connected to the source region. The source region is higher in impurity concentration in a contact () with the source electrode than in a contact with the gate insulating layer, and it is also higher in impurity concentration in the contact () with the source electrode than in a contact with the base region.