The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Apr. 14, 2003
Keisuke Miyazaki, Ikoma, JP;
Kazuhiko Wada, Yamatokooriyama, JP;
Taiji Morimoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrate, and thereafter, a non-doped GaAs protective layeris formed. When the n-type substrateis exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layercan be prevented. Furthermore, the impurity evaporated from the p-type contact layercan be prevented from readhering onto the exposed n-type substrate. A layer where the n-type GaAs substrateand the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laseris succeedingly formed, and the reliability in long-term operation can be improved.