The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jan. 03, 2003
W. Michael Waggoner, Newark, DE (US);
Barry R. Rossing, Newark, DE (US);
Michael A. Richmond, Newark, DE (US);
Michael K. Aghajanian, Newark, DE (US);
Allyn L. Mccormick, Oxford, PA (US);
W. Michael Waggoner, Newark, DE (US);
Barry R. Rossing, Newark, DE (US);
Michael A. Richmond, Newark, DE (US);
Michael K. Aghajanian, Newark, DE (US);
Allyn L. McCormick, Oxford, PA (US);
M Cubed Technologies, Inc., Monroe, CT (US);
Abstract
Improved silicon carbide composites made by an infiltration process feature a metal phase in addition to any residual silicon phase. Not only are properties such as mechanical toughness improved, but the infiltrant can be so engineered as to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. Further, multi-component infiltrant materials may have a lower liquidus temperature than pure silicon, thereby providing the practitioner greater control over the infiltration process. In particular, the infiltration may be conducted at the lower temperatures, where low-cost but effective bedding or barrier materials can terminate the infiltration process once the infiltrant has migrated through the permeable mass up to the boundary between the mass and the bedding material.