The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
May. 08, 2002
Masashi Kitazawa, Ina, JP;
Koichi Shiotani, Nagano-ken, JP;
Masashi Kitazawa, Ina, JP;
Koichi Shiotani, Nagano-ken, JP;
Olympus Optical Co., Ltd., Tokyo, JP;
Abstract
A silicon nitride film is formed all over the surface of a cantilever prepared as including a support portion made by processing single-crystal silicon wafer, a lever portion extended from the support portion, formed with a controlled thickness from single-crystal silicon, and a probe portion made of single-crystal silicon disposed toward the free end of the lever portion with having its probe axis perpendicular to the lever portion, so as to have a greater film thickness on the side face of the probe portion toward the free end of the lever portion, thereby constructing SPM cantilever of configuration where the terminal end portion of the probe portion is tilted toward the free end by a certain angle θ with respect to the probe axis. The SPM cantilever thereby can be achieved as capable of measuring surface conditions always at high resolution correspondingly to measuring condition or sample shape.