The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2005

Filed:

Mar. 31, 2003
Applicants:

Takehiko Nishiyama, Fukushima, JP;

Naomitsu Umemura, Tokyo, JP;

Hiromasa Sato, Koriyama, JP;

Masahiro Murakawa, Koriyama, JP;

Yoshiharu Ooi, Koriyama, JP;

Yuzuru Tanabe, Chiyoda-ku, JP;

Inventors:

Takehiko Nishiyama, Fukushima, JP;

Naomitsu Umemura, Tokyo, JP;

Hiromasa Sato, Koriyama, JP;

Masahiro Murakawa, Koriyama, JP;

Yoshiharu Ooi, Koriyama, JP;

Yuzuru Tanabe, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B007/00 ;
U.S. Cl.
CPC ...
Abstract

An adhesive is coated on at least one surface of a thin film of organic material having birefringent properties and a phase-difference producing function, and a fixing substrate having transmitting or reflecting properties is bonded to the thin film of organic material by the adhesive, wherein materials satisfying relations of E<Eand E<Ewhere Eis the linear expansion coefficient of the thin film of organic material, Eis the linear expansion coefficient of the adhesive and Eis the linear expansion coefficient of the fixing substrate, and the glass transition temperature of the thin film of organic material being 150° or more, are selected. With such structure, temperature characteristics of a phase difference can be obtained so as to reduce a temperature change of an oscillated wavelength emitted from a semiconductor laser source whereby the phase difference can be kept constant even when there is a fluctuation in a wavelength of light emitted from the semiconductor laser source due to temperature.


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