The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Feb. 04, 2004
Applicants:
Akira Inoue, Tokyo, JP;
Seiki Gotou, Tokyo, JP;
Inventors:
Akira Inoue, Tokyo, JP;
Seiki Gotou, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/00 ;
U.S. Cl.
CPC ...
Abstract
A high power semiconductor device including gate electrodes also includes an active region of an approximately rectangular shape, located on a semiconductor substrate; a drain electrode located on the active region; and first and second source electrodes which are disposed on opposite sides to the drain electrode so that the first and second source electrodes face each other across at least some of the gate electrodes. The directions of currents carried by the first and second source electrodes are opposite to each other.