The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Jan. 07, 2004
Akira Inoue, Kadoma, JP;
Akira Asai, Osaka, JP;
Teruhito Ohnishi, Hirakata, JP;
Haruyuki Sorada, Hirakata, JP;
Yoshihiro Hara, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Akira Inoue, Kadoma, JP;
Akira Asai, Osaka, JP;
Teruhito Ohnishi, Hirakata, JP;
Haruyuki Sorada, Hirakata, JP;
Yoshihiro Hara, Hirakata, JP;
Takeshi Takagi, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.