The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Dec. 18, 2001
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Kuniyoshi Mori, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Kuniyoshi Mori, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
In the case of a thick light-absorbing layer, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layeris limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.