The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Dec. 23, 2002
Bishnu Gogoi, Scottsdale, AZ (US);
Raymond M. Roop, Scottsdale, AZ (US);
Bishnu Gogoi, Scottsdale, AZ (US);
Raymond M. Roop, Scottsdale, AZ (US);
Freescale Semiconductor, Inc., Schaumburg, IL (US);
Abstract
A method for creating a MEMS structure is provided. In accordance with the method, an article is provided which comprises a substrate () and a single crystal semiconductor layer (), and having a sacrificial layer () comprising a first dielectric material which is disposed between the substrate and the semiconductor layer. An opening () is created which extends through the semiconductor layer () and the sacrificial layer () and which exposes a portion of the substrate (). An anchor portion () comprising a second dielectric material is then formed in the opening (). Next, the semiconductor layer () is epitaxially grown to a suitable device thickness, thereby forming a device layer ().