The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Oct. 24, 2003
Scott Goad, Pflugerville, TX (US);
James C. Pattison, Round Rock, TX (US);
Edward Ehrichs, Austin, TX (US);
Scott Goad, Pflugerville, TX (US);
James C. Pattison, Round Rock, TX (US);
Edward Ehrichs, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Various methods of fabricating halo regions are disclosed. In one aspect, a method of manufacturing is provided that includes forming a symmetric transistor and an asymmetric transistor on a substrate. A first mask is formed on the substrate with a first opening to enable implantation formation of first and second halo regions proximate first and second source/drain regions of the symmetric transistor. First and second halo regions of a first dosage are formed beneath the first gate by implanting off-axis through the first opening. A second mask is formed on the substrate with a second opening to enable implantation formation of a third halo region proximate a source region of the second asymmetric transistor while preventing formation of a halo region proximate a drain region of the asymmetric transistor. A third halo region of a second dosage greater than the first dosage is formed by implanting off-axis through the second opening.