The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Dec. 11, 2003
Tadahiro Omi, Sendai, JP;
Naoki Ueda, Nara, JP;
Tadahiro Omi, Sendai, JP;
Naoki Ueda, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A non-volatile semiconductor memory device comprising: a first insulating film provided on a silicon based substrate; a first electrode provided on the first insulating film as a floating gate; a second insulating film provided on the first electrode; and a second electrode formed as a control gate on the first electrode through the second insulating film, wherein the first insulating film is formed of at least two layers of: a lower silicon nitride film obtained by nitriding the silicon based substrate; and an upper silicon nitride film or upper silicon oxide film formed on the lower silicon nitride film according to a chemical vapor deposition method, and the lower silicon nitride film contains rare gas elements at an area density of 10cmor more in at least a part of the lower silicon nitride film.