The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Oct. 28, 2003
Applicant:
Mao-yi Chang, Taipei, TW;
Inventor:
Mao-Yi Chang, Taipei, TW;
Assignee:
Au Optronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
A method of fabricating polysilicon film is described. An amorphous silicon layer is formed on the substrate, an optical layer is formed on the amorphous silicon layer, wherein the optical has a first region having a first thickness and a second region having a second thickness, and the reflectivity of the first region for an excimer laser is higher than that of the second region. A laser annealing process is then preformed to transform the amorphous silicon layer into a polysilicon film.