The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Jul. 09, 2003
Masahiko Sano, Anan, JP;
Mitsuhiro Nonaka, Anan, JP;
Kazumi Kamada, Anan, JP;
Masashi Yamamoto, Anan, JP;
Masahiko Sano, Anan, JP;
Mitsuhiro Nonaka, Anan, JP;
Kazumi Kamada, Anan, JP;
Masashi Yamamoto, Anan, JP;
Nichia Corporation, Anan, JP;
Abstract
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.