The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Nov. 21, 2002
Yoshiteru Omura, Seto, JP;
Kentaro Mizuno, Nisshin, JP;
Kouji Tsukada, Seto, JP;
Jiro Sakata, Nagoya, JP;
Norio Fujitsuka, Nisshin, JP;
Yoshiteru Omura, Seto, JP;
Kentaro Mizuno, Nisshin, JP;
Kouji Tsukada, Seto, JP;
Jiro Sakata, Nagoya, JP;
Norio Fujitsuka, Nisshin, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-gun, JP;
Abstract
Force detection devices may have high detection precision and may prevent current leakage through a strain gageto the outside. For example, a force detection blockmay include a semiconductor substrate, a first insulating layerand a semiconductor layer(strain gage). The strain gagepreferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gagepreferably constitutes at least a portion of a ridgeprojects from the surface of the force detection block. A force transmission blockmay be attached to a top surface of the ridge. The width of the first insulating layeris preferably greater than the width of the semiconductor layer