The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2005

Filed:

Aug. 09, 2002
Applicants:

Tatsuyuki Shinagawa, Tokyo, JP;

Norihiro Iwai, Tokyo, JP;

Noriyuki Yokouchi, Tokyo, JP;

Inventors:

Tatsuyuki Shinagawa, Tokyo, JP;

Norihiro Iwai, Tokyo, JP;

Noriyuki Yokouchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/00 ;
U.S. Cl.
CPC ...
Abstract

A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a AlGaAs high-reflectivity layer and an AlGaAs low-reflectivity layer and an AlGaAs slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3≦0.3 and 0.55≦x3<1 and an impurity concentration of 3×10cmor above.


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