The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jan. 17, 2003
Applicant:
Yasushi Hamazawa, Kyoto, JP;
Inventor:
Yasushi Hamazawa, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L023/58 ;
U.S. Cl.
CPC ...
Abstract
A double diffusion MOSFET is disclosed which comprises: a drain regionof an N-type semiconductor layer formed on a semiconductor substrate; a body regionof a P-type semiconductor region formed in the drain region; an N-type source regionformed in the body region; and a gate electrodeformed on a surface of the body region, wherein the drain regioncontains N+ type drain contact regionsand P+ type regionssuch that those are put at an equal potential.