The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Apr. 12, 2001
Masahiro Tanaka, Kanagawa, JP;
Masahiro Tanaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In order to provide a nonvolatile semiconductor storage device designed to take off such existing restraint on the degree of freedom of device design as needed for the purpose of securing design margin, thus realizing a ferroelectric, nonvolatile storage device of high integration density, there is disclosed a capacitor using a ferroelectric thin film is provided, so that the apparent coercive electric field value in the operational guaranteed margin temperature of the nonvolatile semiconductor storage device when regarded as the voltage applied to the capacitor remains within the range of design margin of the nonvolatile semiconductor storage device at the coercive electric field value at the specified temperature, in which a metal oxide of a layer structure having the ferroelectric-to-normal dielectric phase transition point of 800° C. or higher may be used for the ferroelectric thin film.