The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Oct. 17, 2003
Tetsuro Asano, Oizumi-machi, JP;
Mikito Sakakibara, Menuma-machi, JP;
Yoshibumi Nakajima, Ashikaga, JP;
Hidetoshi Ishihara, Oizumi-machi, JP;
Tetsuro Asano, Oizumi-machi, JP;
Mikito Sakakibara, Menuma-machi, JP;
Yoshibumi Nakajima, Ashikaga, JP;
Hidetoshi Ishihara, Oizumi-machi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The switching device also includes a protecting element that has a first n-type region, an insulating region and a second n-type region. This protecting element is connected in parallel between two electrodes of the shunt FET. Since electrostatic charges are discharged between the first and second n-type regions, the electrostatic energy reaching an operation region of the shunt FET can be reduced without an increase in parasitic capacitance.