The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Sep. 09, 2002
Keith J. Thompson, Madison, WI (US);
Keith J. Thompson, Madison, WI (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
According to one embodiment of the invention, a method for via etching in a dielectric material includes providing a wafer () having a substrate (), an etch stop layer () disposed outwardly from the substrate, an Organo-Silica-Glass layer () disposed outwardly from the etch stop layer (), and a photoresist layer () disposed outwardly from the Organo-Silica-Glass layer (), and positioning the wafer () within a process chamber (). The method further includes introducing a first source gas mixture () into the process chamber () to etch a first portion of the Organo-Silica-Glass layer () utilizing the first source gas mixture (), and introducing a second source gas mixture () into the process chamber () to etch, for a predetermined time period, a second portion of the Organo-Silica-Glass layer () down to the etch stop layer (). The second source gas mixture () includes a fluorocarbon, a noble gas, carbon monoxide, and nitrogen.