The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 23, 2003
In-sook Kim, Yongin, KR;
Sun-ae Seo, Seoul, KR;
In-kyeong Yoo, Suwon, KR;
Soo-hwan Jeong, Suwon, KR;
In-sook Kim, Yongin, KR;
Sun-ae Seo, Seoul, KR;
In-kyeong Yoo, Suwon, KR;
Soo-hwan Jeong, Suwon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.