The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
May. 19, 2003
Jay Albert Shideler, Los Altos Hills, CA (US);
Jayasimha Swamy Prasad, San Jose, CA (US);
Ronald Lloyd Schlupp, Los Gatos, CA (US);
Robert William Bechdolt, San Jose, CA (US);
Jay Albert Shideler, Los Altos Hills, CA (US);
Jayasimha Swamy Prasad, San Jose, CA (US);
Ronald Lloyd Schlupp, Los Gatos, CA (US);
Robert William Bechdolt, San Jose, CA (US);
Micrel, Incorporated, San Jose, CA (US);
Abstract
Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielectric isolation layer overlying the base layer, and an emitter structure overlying the dielectric isolation layer and contacting the base layer through a central aperture in the dielectric layer. The transistor may be a heterojunction bipolar transistor with the base layer formed of a selectively grown silicon germanium alloy. A dielectric spacer may be formed adjacent the emitter structure and over a portion of the base layer.