The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Nov. 26, 2002
Kenichi Inoue, Kawasaki, JP;
Yoshinori Obata, Kawasaki, JP;
Takeyasu Saito, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Koji Tani, Kawasaki, JP;
Jirou Miura, Kawasaki, JP;
Tatsuya Yokota, Kawasaki, JP;
Satoru Mihara, Kawasaki, JP;
Yukinobu Hikosaka, Kawasaki, JP;
Yasutaka Ozaki, Kawasaki, JP;
Kenichi Inoue, Kawasaki, JP;
Yoshinori Obata, Kawasaki, JP;
Takeyasu Saito, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Koji Tani, Kawasaki, JP;
Jirou Miura, Kawasaki, JP;
Tatsuya Yokota, Kawasaki, JP;
Satoru Mihara, Kawasaki, JP;
Yukinobu Hikosaka, Kawasaki, JP;
Yasutaka Ozaki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.