The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 30, 2002
Tae Hyeok Lee, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Dong Su Park, Kyoungki-do, KR;
Sang Ho Woo, Kyoungki-do, KR;
Tae Hyeok Lee, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Dong Su Park, Kyoungki-do, KR;
Sang Ho Woo, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for fabricating a capacitor for a semiconductor device is disclosed, which comprises the steps of: forming a storage node electrode on a semiconductor wafer, forming a dielectric layer made of a cyclic silicon nitride layer on the surface of the storage node electrode, and forming an upper electrode on the dielectric layer; lowering the thickness Tof the dielectric layer and improving leakage current characteristics through use of a cyclic SiNor a cyclic SiON(wherein x falls between 0.1 and 0.9 and y falls between 0.1 and 2), having a large oxidation resistance and high dielectric ratio, as a dielectric.