The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
May. 19, 2004
Applicant:
Hyun Sang Hwang, Kwangju, KR;
Inventor:
Hyun Sang Hwang, Kwangju, KR;
Assignee:
Kwangju Institute of Science and Technology, Kwangju, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8238 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of manufacturing a high-k gate dielectric, characterized in that an annealing process in a forming gas atmosphere, corresponding to a final step of a manufacturing process of a semiconductor device based on MOSFET fabrication techniques, is applied for a high-k gate dielectric-containing semiconductor device, under high pressure, instead of conventional atmospheric pressure, whereby passivation effects of interface charges and fixed charges of the semiconductor device can be maximized even at relatively low temperatures.