The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Sep. 09, 2002
Gary J. O'brien, Gilbert, AZ (US);
David J. Monk, Mesa, AZ (US);
Gary J. O'Brien, Gilbert, AZ (US);
David J. Monk, Mesa, AZ (US);
Freescale Semiconductor, Inc., Schaumburg, IL (US);
Abstract
A method for creating a MEMS structure is provided. In accordance with the method, a substrate () is provided having a sacrificial layer () disposed thereon and having a layer of silicon () disposed over the sacrificial layer. A first trench () is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region () enclosed by the first trench and a second region () exterior to the first trench. A first material () is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench () is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.