The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jun. 18, 2002
Arulkumar P. Shanmugasundram, Sunnyvale, CA (US);
Alexander T. Schwarm, Austin, TX (US);
Ilias Iliopoulos, San Bruno, CA (US);
Alexander Parkhomovsky, Santa Clara, CA (US);
Martin J. Seamons, San Jose, CA (US);
Arulkumar P. Shanmugasundram, Sunnyvale, CA (US);
Alexander T. Schwarm, Austin, TX (US);
Ilias Iliopoulos, San Bruno, CA (US);
Alexander Parkhomovsky, Santa Clara, CA (US);
Martin J. Seamons, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of film deposition in a chemical vapor deposition (CVD) process includes (a) providing a model for CVD deposition of a film that defines a plurality of regions on a wafer and identifies one or more film properties for at least two regions of the wafer and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of the one or more film properties for the deposited film of step (b) for each of the at least two regions of the wafer and determining a film property; (d) calculating an updated deposition model based upon the film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control film properties other than film thickness.