The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Feb. 20, 2003
Ho-chul Kim, Seoul, KR;
Ho-Chul Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A photomask is useful in measuring the aberration of an optical lens. The photomask includes a transparent substrate, a first opaque pattern formed on a first surface of the transparent substrate and defining a plurality of apertures that expose the first surface, and a second opaque pattern formed on the second surface of the transparent substrate. The photomask is placed in an exposure apparatus between a light source of the exposure apparatus and an optical lens whose aberration is to be measured. A photoresist layer on a wafer is exposed through the photomask and the pupil of the optical lens to form a first pattern on the wafer corresponding to the second opaque pattern of the photomask. The aberration of the pupil of the optical lens is evaluated based on the relative location at which the first pattern is formed on the wafer. Because the optical aperture is formed on the photomask along with the pattern whose image is to be transferred to the photoresist layer, the alignment between the optical aperture and the photomask pattern is assured.