The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 17, 2001
Tokiko Kanayama, Amagasaki, JP;
Hiroaki Kouno, Yawata, JP;
Tokiko Kanayama, Amagasaki, JP;
Hiroaki Kouno, Yawata, JP;
Sumitomo Precision Products Co., LTD, Hyogo, JP;
Abstract
A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeFgas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, HO reacts with XeF, and HF is produced. For example, a native oxide SiOformed on the surface of silicon small particles can be removed, and XeFdirectly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.