The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Mar. 21, 2003
Masayuki Jyumonji, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center, Yokohama, JP;
Abstract
A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.